Researchers Develop Stepwise Evaporation Method to Reduce Contact Resistance in Transistors

As transistor dimensions continue to shrink, though, structural disorder in metals and at metal-semiconductor interfaces increasingly impedes carrier injection and transport. Metals therefore need a level of structural order comparable to that of single-crystal semiconductors in order to push device performance toward its physical limits. The post Researchers Develop Stepwise Evaporation Method to Reduce Contact Resistance in Transistors appeared first on Semiconductor Digest .